PART |
Description |
Maker |
UDN2559B UDN2559LB |
1 A 4 CHANNEL, AND GATE BASED PRPHL DRVR, PDIP16 1 A 4 CHANNEL, AND GATE BASED PRPHL DRVR, PDSO16
|
|
EL7252CS-T7 |
2 A 2 CHANNEL, NAND GATE BASED MOSFET DRIVER, PDSO8
|
ELANTEC
|
TPD7101F |
0.4 A BUF OR INV BASED MOSFET DRIVER, PDSO24 2 channel High-Side N-ch Power MOSFET Gate Driver
|
Toshiba Semiconductor
|
ISL6609CBZ ISL6609 ISL6609CRZ-T ISL6609ACBZ ISL660 |
Synchronous Rectified MOSFET Driver 4 A AND GATE BASED MOSFET DRIVER, PDSO8 Synchronous Rectified MOSFET Driver 4 A AND GATE BASED MOSFET DRIVER, PQCC8 From old datasheet system
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
MIC4421 MIC4421BM MIC4421BN MIC4421CM MIC4421CN MI |
9A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process 9 A BUF OR INV BASED MOSFET DRIVER, PDSO8 FPGA - 100000 SYSTEM GATE 2.5 VOLT - NOT RECOMMENDED for NEW DESIGN 9 A BUF OR INV BASED MOSFET DRIVER, PDIP8 FPGA - 100000 SYSTEM GATE 2.5 VOLT - NOT RECOMMENDED for NEW DESIGN 9 A BUF OR INV BASED MOSFET DRIVER, PSFM5 9A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process 9 A BUF OR INV BASED MOSFET DRIVER, PDIP8
|
MICREL INC MICREL[Micrel Semiconductor] Micrel Semiconductor, Inc.
|
SC54E6 |
SIEMENS ANNOUNCES A SUB-MICTON GENERATION OF CHANNELLESS GATE-ARRAYS BASED ON THE PROVEN MEGALOGIC PROCESS 西门子公司宣布了一个小组MICTON发电的CHANNELLESS门阵列基于经过验证的MEGALOGIC过程
|
SIEMENS AG
|
MGP20N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGP21N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGP4N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGW14N60ED-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGW21N60ED-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|